lead-free green ds30756 rev. 3 - 2 1 of 5 drdnb21d www.diodes.com diodes incorporated drdnb21d complex array for dual relay driver a m j l d f b c h k mechanical data new product epitaxial planar die construction two pre-biased transistors and two switching diodes, internally connected in one package ideally suited for automated assembly processes lead free by design/rohs compliant (note 1) "green" device (note 2) qualified to aec-q101 standards for high reliability case: sot-363 case material: molded plastic. "green" molding compound. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminal connections: see diagram terminals: finish - matte tin annealed over alloy 42 leadframe. solderable per mil-std-202, method 208 marking & type code information: see last page ordering information: see last page weight: 0.006 grams (approximate) maximum ratings, total device characteristic symbol value unit power dissipation (note 3) p d 200 mw thermal resistance, junction to ambient air (note 3) r ja 625 c/w operating and storage junction temperature range t j ,t stg -55 to +150 c @ t a = 25 c unless otherwise specified characteristic symbol value unit collector-base voltage v cc 50 v collector-emitter voltage v in -5 to +12 v emitter-base voltage i o 100 ma output current - continuous (note 3) i c 200 ma maximum ratings, pre-biased npn transistor @ t a = 25 c unless otherwise specified features r1 = r3 = 2.2k (nominal) r2 = r4 = 47k (nominal) notes: 1. no purposefully added lead. 2. diodes inc.'s "green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad layout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf . 1 3 2 6 5 4 r4 r3 r2 r1 1 2 3 4 5 6 d1 d2 q1 q2 r2 r4 r3 r1 sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal f 0.30 0.40 h 1.80 2.20 j 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 0 8 all dimensions in mm
ds30756 rev. 3 - 2 2 of 5 drdnb21d www.diodes.com characteristic symbol value unit non-repetitive peak reverse voltage v rm 100 v peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 75 v rms reverse voltage v r(rms) 53 v forward continuous current (note 3) i fm 500 ma average rectified output current (note 3) i o 250 ma non-repetitive peak forward surge current @ t = 1.0 s @ t = 1.0s i fsm 4.0 2.0 a maximum ratings, switching diode @ t a = 25 c unless otherwise specified electrical characteristics, pre-biased npn transistor @ t a = 25 c unless otherwise specified characteristic symbol min typ max unit test condition input voltage v l(off) 0.5 v v cc = 5v, i o = 100 a v l(on) 1.1 v v o = 0.3v, i o = 5ma output voltage v o(on) 0.3 v i o /i l = 50ma/0.25ma input current i l 3.6 ma v i = 5v output current i o(off) 0.5 ua v cc = 50v, v i = 0v dc current gain g l 80 v o = 5v, i o = 10ma input resistor tolerance r1 -30 +30 % resistance ratio tolerance r2/r1 -20 +20 % gain-bandwidth product* f t 250 mhz v ce = 10v, i e = 5ma, f = 100mhz * transistor - for reference only electrical characteristics, switching diode @ t a = 25 c unless otherwise specified characteristic symbol min max unit test condition reverse breakdown voltage (note 4) v (br)r 75 v i r = 10 a forward voltage (note 4) v f 0.62 0.72 0.855 1.0 1.25 v i f = 5.0ma i f = 10ma i f = 100ma i f = 150ma reverse current (note 4) i r 2.5 50 30 25 a a a na v r = 75v v r = 75v, t j = 150 c v r = 25v, t j = 150 c v r = 20v total capacitance c t 4.0 pf v r = 0, f = 1.0mhz reverse recovery time t rr 4.0 ns i f = i r = 10ma, i rr = 0.1 x i r ,r l = 100 notes: 3. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad layout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf . 4. short duration pulse test used to minimize self-heating effect. new product
ds30756 rev. 3 - 2 3 of 5 drdnb21d www.diodes.com new product pre-biased npn transistor elements 0.001 0.01 0.1 1 0 10 20 30 40 50 v , maximum collector voltage (v) ce(sat) fig. 2 i , collector current (ma) v vs. i c ce ( sat ) c i/i =10 cb -25 c 75 c 25 c 10 1000 100 1 10 100 h , dc current gain fe i , collector current (ma) c fi g . 3 dc current gain v=10 ce 75 c -25 c 25 c 0.1 1 10 01020304050 i , collector current (ma) fi g . 5 input volta g e vs. collector current c v=0.2 o v , input voltage (v) in -25c 25c 75 c 0 50 100 100 200 p , power dissipation (mw) d t , ambient temperature (c) fi g . 1, power deratin g curve ( total device ) a 150 200 2 5 0 0 0.001 0.01 1 10 100 0 1 234 89 10 i , collector current (ma) c v , input voltage (v) fi g . 4 collector current vs. input volta g e in -25c 5 67 25c 0.1 v=5v o 75c device characteristics
ds30756 rev. 3 - 2 4 of 5 drdnb21d www.diodes.com 0 1 2 3 4 0 20 30 c , c apa c itance (pf) ob v , reverse bias voltage (v) fig. 6 output capacitance r 10 5 15 25 i=0ma e 10 100 1000 1 0.1 0 1.6 1.2 0.4 0.8 i , instantaneous forward current (ma) f v , instantaneous forward voltage (v) fi g .7 t y pical forward characteristics f t = 125oc a t = -40oc a t = 75oc a t = 25oc a t = 0oc a pre-biased npn transistor elements ( continued) switching diode elements 0.1 1 10 100 1000 10000 0 20 40 60 80 100 v , reverse voltage (v) fi g .8 t y pical reverse characteristics r i , instantaneous reverse current (na) r t = -40oc a t = 25oc a t = 75oc a t = 125oc a t=0oc a 0 0.5 1 2.5 2 1.5 3 010 20 40 30 50 c , total capacitance (pf) t v , reverse voltage (v) fi g .9 t y pical capacitance vs. reverse volta g e r f=1mhz new product
ds30756 rev. 3 - 2 5 of 5 drdnb21d www.diodes.com xxxx = product type marking code ym = date code marking y = year, e.g., t = 2006 m = month, e.g., 1 = january marking information notes: 5. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. device marking code packaging shipping DRDNB21D-7 rd08 sot-363 3000/tape & reel ordering information (note 5) month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd year 2005 2006 2007 2008 2009 code st uvw date code key important notice life support www.diodes.com diodes, inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhance- ments, improvements, or other changes. diodes, inc. does not assume any liability arising out of the application or use of any product described herei n; neither does it convey any license under its patent rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on our website, harmless against all damages. the products located on our website at are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of diodes incorporated. rd08 ym new product typical application circuit l1 relay1 relay2 drdnb21d rl2 d1 q2 q1 d2 r2 r4 r3 r1 rl1 l2 typical application circuit using drdnb21d with two independent relays.
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